| PART |
Description |
Maker |
| LPW-551202F LPW-551202G LPW-551202H LPW-551202J LP |
Extremely Low Resistance Power Wirewounds
|
IRC - a TT electronics Company.
|
| IRFR5410TRLPBF IRFR5410TRPBF IRFR5410TRRPBF IRFR54 |
13 A, 100 V, 0.205 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
Ultra Low On-Resistance
Ultra Low On-Resistance
ULTRA LOW ON RESISTANCE
|
International Rectifier
|
| IRFR3910PBF IRFR3910TR IRFR3910TRPBF IRFR3910PBF-1 |
16 A, 100 V, 0.115 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Ultra Low On-Resistance
ULTRA LOW ON RESISTANCE
Ultra Low On-Resistance
|
International Rectifier
|
| IPW65R190C6 IPA65R190C6 IPP65R190C6 |
650 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
650V CoolMOS C6 Power Transistor
Extremely low losses due to very low FOM Rdson*Qg and Eoss
|
Infineon Technologies AG
|
| IRF7702GPBF IRF7703GPBF |
HEXFETPower MOSFET Ultra Low On-Resistance 1.8V Rated
Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile (1.2mm) Available in Tape & Reel Lead-Free Halogen-Free
|
International Rectifier
|
| FMMT720 |
625mW power dissipation, Extremely low saturation voltage e.g. 10mV typ
|
TY Semiconductor Co., Ltd
|
| PMF370XN |
N-channel mTrenchMOS extremely low level FET
N-channel uTrenchmos (tm) extremely low level FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| AP2R803GH-HF14 |
Low On-resistance
Low On-resistance, Simple Drive Requirement
|
Advanced Power Electronics Corp.
Advanced Power Electron...
|
| STS9D8NH3LL |
Dual N-channel 30 V - 0.012 Ω - 9 A - SO-8 low on-resistance STripFET?/a> Power MOSFET
Dual N-channel 30 V - 0.012 ヘ - 9 A - SO-8 low on-resistance STripFET⑩ Power MOSFET
|
STMicroelectronics
|
| PLO PLO-5 PLO-7 PLO-15 PLO-10 PLO-3 |
Low Resistance Power Wirewounds
|
TT Electronics / Welwyn
|
| 2SK3652 |
Low on-resistance, low Qg High avalanche resistance For high-speed switching
|
TY Semiconductor Co., Ltd
|
